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|Title: ||Growth and characterization of nonpolar a-plane ZnO films on perovskite oxide with thin homointerlayer|
|Authors: ||Yuan-Chang Lian|
|Contributors: ||NTOU:Institute of Materials Engineering|
|Keywords: ||Characterization;Physical vapor deposition processes;Oxides|
|Issue Date: ||2011-10-20T08:07:42Z
|Publisher: ||Abstract proceedings of the 16th international conference on crystal growth|
|Abstract: ||abstract:Nonpolar a-plane ZnO thin films were deposited on the perovskite SrTiO3 (100) substrates at 700oC by radio-frequency magnetron sputtering. The effect of thin ZnO interlayer grown at 300-500oC on the physical properties of ZnO/SrTiO3 thin films is investigated. The x-ray diffraction patterns reveal that the ZnO thin films on the SrTiO3 substrates without a ZnO thin interlayer and with a ZnO thin interlayer grown at 500oC show a (110) crystallographic feature; x-ray phi-scans reveal the ZnO thin films are epitaxially grown on the SrTiO3 substrates. Moreover, the high resolution transmittance electron microscopy image shows an atomically sharp interface of the ZnO/SrTiO3 thin films. However, the ZnO thin films with the thin ZnO interlayers grown at the temperature below 500oC have a mixed crystallographic feature. Atomic force microscopy morphology studies reveal that the thin ZnO interlayer effectively decreases the surface roughness of the epitaxial ZnO film and improves the crystalline quality of the film. This may be because of the thin ZnO interlayer grown at 500oC effectively decreases the stress between the ZnO and SrTiO3. Photoluminescence spectra at room temperature were measured for the epitaxial ZnO films, showing the strong ultraviolet emission near 380 nm. The integration of ZnO transparent semiconductor with high-k dielectric perovskite substrates may lead to a wide variety of novel optoelectronic devices.|
|Appears in Collections:||[材料工程研究所] 演講及研討會|
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