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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/23737

Title: Annealing-induced changes in the nanoscale electrical homogeneity of bismuth ferrite dielectric thin films
Authors: Yuan-Chang Liang;W.S. Chen;Chia-Yen Hu;Chiem-Lum Huang;W Kai
Contributors: NTOU:Institute of Materials Engineering
Keywords: A. Films;B. Defects;B. Surfaces;C. Electrical properties;D. Perovskites
Date: 2011-09
Issue Date: 2011-10-20T08:07:40Z
Publisher: Ceramics International
Abstract: Abstract:In this study, we investigated the effects of forming gas (7% H2 + 93% Ar) annealing (FGA) and recovery annealing (RA) in ambient oxygen on the structure and electrical properties of BiFeO3 (BFO) thinfilms. X-ray diffraction results indicate that BFO remains in the perovskite phase following FGA. However, the spatial distribution of current maps obtained by conductive atomic force microscopy shows that FGA-treated BFO thinfilms are less electrically insulating than those without prepared thermal annealing. Recovery annealing improves the structural and chemical homogeneity of the FGA-treated films, thereby increasing the electrical resistance of the films.
Relation: 37(7), pp.2391-2396
URI: http://ntour.ntou.edu.tw/handle/987654321/23737
Appears in Collections:[材料工程研究所] 期刊論文

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