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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/23713

Title: In situ characterization of lattice relaxation in the BaTiO3/LaNiO3 superlattices epitaxially grown on SrTiO3 substrates
Authors: Yuan-Chang Liang;Hsin-Yi Lee;Heng-Jui Liu;Tai-Bor Wu
Contributors: NTOU:Institute of Materials Engineering
國立臺灣海洋大學:材料工程研究所
Keywords: A1. In situ X-ray diffraction and reflectivity;A1. Interface;A1. Superlattices;A1. Surface structure
Date: 2005-04-01
Issue Date: 2011-10-20T08:07:26Z
Publisher: Journal of Crystal Growth
Abstract: Abstract:The onset of lattice strain relaxation against the number of bilayers (N) in an epitaxial BaTiO3 (3 nm)/LaNiO3 (3 nm) superlattice grown on a SrTiO3 (0 0 1) substrate was characterized in situ by X-ray diffraction and reflectivity measurements with synchrotron radiation. At the initial stage of superlattice growth, highly strained and smooth sublayers were found, indicating the repetition of two-dimensional nuclei and growth of the sublayer on the flat terrace of a SrTiO3substrate; on increasing the bilayer number to N=10, the growth front becomes rougher to relieve the lattice strain. Further increasing the bilayer number to N=11, an abrupt increase of interfacial roughness is also followed. It corresponds to the effective critical thickness for pseudomorphic growth of a superlattice, beyond which surface and interface undulation result from the generation of interfacial misfit dislocations.
Relation: 276(3-4), pp.534-540
URI: http://ntour.ntou.edu.tw/handle/987654321/23713
Appears in Collections:[材料工程研究所] 期刊論文

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