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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/23696

Title: Fabrication and opto-electronic properties of ITO/ZnO bilayer films on polyethersulfone substrates by ion beam assisted evaporation
Authors: Chi-Chang Liu;Yuan-Chang Liang;Chin-Chiuan Kuo;Yeuh-Yeong Liou;Jia-Wen Chen;Chung-Chih Lin
Contributors: NTOU:Institute of Materials Engineering
國立臺灣海洋大學:材料工程研究所
Keywords: Indium tin oxide;Polyethersulfone substrate;Ion beam-assisted evaporation;Resistivity;Transmittance
Date: 2009
Issue Date: 2011-10-20T08:07:18Z
Publisher: Solar Energy Materials and Solar Cells
Abstract: Abstract:Transparent conducting oxides bilayer films stacked by one 130-nm-thick indium tin oxide (ITO) top layer and one 75-nm-thick zinc oxide (ZnO) buffer layer were grown onto polyethersulfone (PES) substrates by ion beam-assisted evaporation. The effects of ion energy and ZnO buffer layers on the structural and opto-electric properties of ITO films were initially investigated. The as-deposited ZnO buffer layers show wurtzite (0 0 2) preferred orientation on the PES substrates with ion beam assistance. The results of X-ray diffraction reveal a marked increase in the crystallinity of the ITO films which use ZnO as a buffer layer material. A drop of ∼60% in electrical resistivity of the ITO film on the PES can be achieved by using ZnO buffer layer. The transmittance of the ITO/ZnO bilayer was not deteriorated due to the insertion of ZnO layer. The lowest electrical resistivity of 6.552×10−4 Ω-cm associated with the transmittance of ∼80% at the wavelength of 550 nm can be obtained for the ITO film on the ZnO-coated PES at ion energy of 60 eV. The ITO films on the ZnO-buffered PES with moderate control of ion energy have a promising future for the application of the contact layers for flexible solar cells.
Relation: 93(2), pp.267-272
URI: http://ntour.ntou.edu.tw/handle/987654321/23696
Appears in Collections:[材料工程研究所] 期刊論文

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