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|Title: ||Surface morphology and conductivity of zirconium-doped nanostructured indium oxide films with various crystallographic features|
|Authors: ||Yuan-Chang Lian|
|Contributors: ||NTOU:Institute of Materials Engineering|
|Keywords: ||A. Films;B. Non-destructive evaluation;E. Electrodes|
|Issue Date: ||2011-10-20T08:07:15Z
|Publisher: ||Ceramics International|
|Abstract: ||Abstract:Zr-doped In2O3 (Zr-In2O3) thin films with various degrees of crystallography ((2 2 2)-epitaxial, (2 2 2)-textured, and randomly oriented films) were grown on various substrates by rf magnetron sputtering. Atomic force microscopy images demonstrate that the substrate profoundly affects the topography of the Zr-In2O3 films. The surface of the Zr-In2O3 epilayer on the Al2O3(0 0 0 1) substrate comprises a three-dimensional island-like structure. Some discrete mounds were found on the Zr-In2O3 film grown on the ZnO(0 0 2)-buffered Al2O3(0 0 0 1) substrate. Large triangular grains contribute to the largest root mean square surface roughness of the polycrystalline Zr-In2O3 film on the Si(1 0 0) substrate. Current maps obtained by conductive atomic force microscopy show that the current distribution depends on the surface topography. Comparatively, the surface of the Zr-In2O3 epilayer on the Al2O3(0 0 0 1) substrate exhibits a smooth feature, and the corresponding spatial distribution of current images reveals a more homogeneous current map than that of the textured and polycrystalline films.|
|Relation: ||36(5), pp.1743-1747|
|Appears in Collections:||[材料工程研究所] 期刊論文|
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