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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/23681

Title: Nano-scale electrical and crystallographic properties of ultra-thin dielectric films
Authors: Yuan-Chang Liang;Yung-Ching Liang
Contributors: NTOU:Institute of Materials Engineering
Keywords: Characterization;X-ray scattering;Surface morphology;Nanoscale electricalproperties
Date: 2010-08-31
Issue Date: 2011-10-20T08:07:11Z
Publisher: Thin Solid Films
Abstract: Abstract:Thin SrTiO3 (STO) films with a thickness of 14 nm were grown on the Pt/Ti/SiO2/Si (STO/Pt) and Ru/SiO2/Si (STO/Ru) substrates at room temperature by radio-frequency magnetron sputtering. The as-deposited STO films were then post-annealed at 450–650 °C in an oxygen atmosphere in order to obtain various crystallographic features. The crystalline STO/Pt and STO/Ru films were obtained at an annealing temperature above 550 °C. The results of X-ray photoelectron spectroscope reveal that the crystalline STO films have a microscopically homogeneous film structure. Besides, secondary ion mass spectrometry depth profiles show an increase of interface roughness with an increasing annealing temperature of the STO films. Atomic force microscope images also show that the surface of the crystalline STO/Ru film is smoother than that of the STO/Pt film at a given annealing temperature. The effective improvement in the chemical homogeneity and surface roughness of the STO films results in a considerable decrease in the nanostructural leakage current of the STO films upon the use of a Ru electrode.
Relation: 518(21), PP.S17-S21
URI: http://ntour.ntou.edu.tw/handle/987654321/23681
Appears in Collections:[材料工程研究所] 期刊論文

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