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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/23680

Title: Growth of epitaxial zirconium-doped indium oxide (222) at low temperature by rf Sputtering
Authors: Yuan-Chang Lian;Hsin-Yi Lee
Contributors: NTOU:Institute of Materials Engineering
國立臺灣海洋大學:材料工程研究所
Date: 2010
Issue Date: 2011-10-20T08:07:10Z
Publisher: CrystEngComm
Abstract: Abstract:Zr-doped In2O3 (Zr-In2O3) (222) epitaxial layers of thickness 210 nm were grown on yttria-stabilized zirconia (YSZ) (111) and Al2O3 (0001) substrates with rf magnetron sputtering at 350 °C in an atmosphere deficient in oxygen. X-Ray scattering and use of a transmission electron microscope (TEM) revealed Zr-In2O3 films to be deposited epitaxially on YSZ (111) and Al2O3 (0001). Images observed with an atomic-force microscope demonstrate that the substrate profoundly affected the topography of the Zr-In2O3 (222) epilayers. The large mismatch of the Zr-In2O3 (222)/Al2O3 (0001) heteroepitaxy was responsible for the surface structure of the epilayer being rougher than that on YSZ (111). Cross-sectional TEM images reveal dense crystalline films with no macroscopic imperfection; the crystalline order of Zr-In2O3 epilayers is preserved up to the top surface. The Zr-In2O3 (222)/YSZ (111) heteroepitaxy has a Hall mobility greater than that of Zr-In2O3 (222)/Al2O3 (0001), perhaps due to the greater lattice mismatch of the Zr-In2O3 (222)/Al2O3 (0001) heteroepitaxy that results in Zr-In2O3 having a poor crystalline quality. Domain boundaries on a nanometre scale were found in the heteroepitaxial Zr-In2O3 (222)/Al2O3 (0001) resulting from random nucleation and relaxation of misfit stress. The existence of these domain boundaries on a nanometre scale thus affects the electrical properties of the Zr-In2O3 epilayer.
Relation: 12(10), pp.3172-3176
URI: http://ntour.ntou.edu.tw/handle/987654321/23680
Appears in Collections:[材料工程研究所] 期刊論文

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