Please use this identifier to cite or link to this item:
|Title: ||Growth and characterization of nonpolar a-plane ZnO films on perovskite oxides with thin homointerlayer|
|Authors: ||Yuan-Chang Lian|
|Contributors: ||NTOU:Institute of Materials Engineering|
|Keywords: ||Characterization;Physical vapor deposition processes;Oxides|
|Issue Date: ||2011-10-20T08:07:10Z
|Publisher: ||Journal of Alloys and Compounds|
|Abstract: ||Abstract:Nonpolar a-plane ZnO thin films were deposited on the single-crystal perovskite SrTiO3 (1 0 0) substrates at 750 °C by radio-frequency magnetron sputtering. The effects of ultrathin 30 nm-thick ZnO buffer layer grown at 300–600 °C on the physical properties of ZnO/SrTiO3(STO) thin films are investigated. A high growth temperature of ZnO buffer layer enhances not only the (1 1 0)-texture of ZnO/STO thin films but also the crystalline quality of the film. However, the ZnO/STO thin film without a ZnO buffer layer has a poor crystalline quality comparing to those with the ZnO buffer layer. Atomic force microscopy morphology studies reveal that the ZnO buffer layer largely decreases the surface roughness of the ZnO/STO thin films. This may be because of the thin ZnO buffer layer effectively decreases the stress between the ZnO and STO. The results of X-ray diffraction, high-resolution transmission electron microscopy, and photoluminescence spectra show that a high-quality epitaxial ZnO (1 1 0)/STO (1 0 0) thin film that emits UV light at room temperature can be formed with a thin ZnO buffer layer grown at 600 °C.|
|Relation: ||508(1), pp.158-161|
|Appears in Collections:||[材料工程研究所] 期刊論文|
Files in This Item:
There are no files associated with this item.
All items in NTOUR are protected by copyright, with all rights reserved.