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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/23679

Title: Growth and characterization of nonpolar a-plane ZnO films on perovskite oxides with thin homointerlayer
Authors: Yuan-Chang Lian
Contributors: NTOU:Institute of Materials Engineering
國立臺灣海洋大學:材料工程研究所
Keywords: Characterization;Physical vapor deposition processes;Oxides
Date: 2010-10-15
Issue Date: 2011-10-20T08:07:10Z
Publisher: Journal of Alloys and Compounds
Abstract: Abstract:Nonpolar a-plane ZnO thin films were deposited on the single-crystal perovskite SrTiO3 (1 0 0) substrates at 750 °C by radio-frequency magnetron sputtering. The effects of ultrathin 30 nm-thick ZnO buffer layer grown at 300–600 °C on the physical properties of ZnO/SrTiO3(STO) thin films are investigated. A high growth temperature of ZnO buffer layer enhances not only the (1 1 0)-texture of ZnO/STO thin films but also the crystalline quality of the film. However, the ZnO/STO thin film without a ZnO buffer layer has a poor crystalline quality comparing to those with the ZnO buffer layer. Atomic force microscopy morphology studies reveal that the ZnO buffer layer largely decreases the surface roughness of the ZnO/STO thin films. This may be because of the thin ZnO buffer layer effectively decreases the stress between the ZnO and STO. The results of X-ray diffraction, high-resolution transmission electron microscopy, and photoluminescence spectra show that a high-quality epitaxial ZnO (1 1 0)/STO (1 0 0) thin film that emits UV light at room temperature can be formed with a thin ZnO buffer layer grown at 600 °C.
Relation: 508(1), pp.158-161
URI: http://ntour.ntou.edu.tw/handle/987654321/23679
Appears in Collections:[材料工程研究所] 期刊論文

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