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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/23648

Title: Thermal Stability of Cu(W) and Cu(Mo) Films for Advanced Barrierless Cu Metallization: Effects of Annealing Time
Authors: J. P. Chu;C. H. Lin
Contributors: NTOU:Institute of Materials Engineering
國立臺灣海洋大學:材料工程研究所
Keywords: Copper metallization;barrierless;focused ion beam (FIB);thermal reliability
Date: 2006-11-01
Issue Date: 2011-10-20T08:06:57Z
Publisher: Journal of Electronic Materials
Abstract: Abstract:The current study investigates the effects of insoluble substances (W and Mo) in pure Cu films on the thermal stability, microstructure, and electrical properties of the films. The results can be used to assess the feasibility of the barrierless Cu film in the metallization process. The films investigated were deposited using magnetron sputtering onto the barrierless Si (100) substrate and then annealed between 400°C and 450°C in vacuum for long periods of time. After annealing, the film properties were examined by x-ray diffraction (XRD), the four-point probe method, leakage current measurements, and focused ion beam (FIB) analysis. The results indicate that no detectable copper silicide is formed after 48-h annealing of Cu(W) films at 400°C. In contrast, for the Cu(Mo) film, copper silicide is formed after 18-h annealing at the same temperature and hence electrical properties are poor. This evidence suggests that the Cu(W) film has better thermal stability during long periods of annealing and is suitable for an advanced barrierless metallization process.
Relation: 35(11), pp.1933-1936
URI: http://ntour.ntou.edu.tw/handle/987654321/23648
Appears in Collections:[材料工程研究所] 期刊論文

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