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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/23647

Title: Thermal Stability Enhancement in Nanostructured Cu Films Containing Insoluble Tungsten Carbides For Metallization
Authors: J. P. Chu;Y. Y. Hsieh;C. H. Lin;T. Mahalingam
Contributors: NTOU:Institute of Materials Engineering
國立臺灣海洋大學:材料工程研究所
Keywords: Electrical properties;Sputtering;X-ray photoelectron spectroscopy (XPS)
Date: 2005
Issue Date: 2011-10-20T08:06:57Z
Publisher: Journal of Materials Research
Abstract: Abstract:We report enhanced thermal stabilities of nanostructured Cu films containing insoluble tungsten carbides prepared by sputter deposition. Tungsten carbides in the form of W2C are present in the supersaturated solid solution of Cu, as confirmed by x-ray photoelectron spectroscopy, scanning electron microscopy, and x-ray diffraction analyses. Focused ion beam analysis revealed that the films are thermally stable during annealing when they are in contact with Si without a diffusion barrier, and the copper silicide was not formed up to an annealing temperature of 400 °C. Leakage current characteristic evaluation on SiO2/Si metal oxide semiconductor (MOS) structure also revealed the superior reliability of Cu with a dilute amount of tungsten carbides, indicating their usefulness in advanced barrierless metallization applications. The films with higher amount of tungsten carbides exhibited good thermal stability at high temperatures and could be rationalized as a consequence of a refined grain structure together with the strengthening effect of W2C.
Relation: 20(6), pp.1379-1384
URI: http://ntour.ntou.edu.tw/handle/987654321/23647
Appears in Collections:[材料工程研究所] 期刊論文

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