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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/23645

Title: Thermal Performance of Sputtered Insoluble Cu(W) Films for Advanced Barrierless Metallization
Authors: J. P. Chu;C. H. Lin;Y. Y. Hsieh
Contributors: NTOU:Institute of Materials Engineering
Keywords: Copper film;metallization;barrierless;focused ion beam;thermal cycling
Date: 2006-01-01
Issue Date: 2011-10-20T08:06:56Z
Publisher: Journal of Electronic Materials
Abstract: Abstract:The thermal performance of sputtered Cu films with dilute insoluble W (1.3 at.%) on barrierless Si substrates has been studied, using the analyses of focused ion beam, x-ray diffraction, and electrical resistivity measurement. The role of the Cu(W) film as a seed layer has been confirmed based on the thermal performance evaluations in both thermal cycling and isothermal annealing at various temperatures. The electrical resistivity of ∼1.8 µΩ-cm for Cu/Cu(W) film is obtained after thermal annealing at 400°C. Because of the good thermal stability, the Cu(W) seed layer is also considered to act as a diffusion buffer and is stable up to 490°C for the barrierless Si scheme. The results indicate that the Cu/Cu(W) scheme has potential in advanced barrierless metallization applications.
Relation: 35(1), pp.76-80
URI: http://ntour.ntou.edu.tw/handle/987654321/23645
Appears in Collections:[材料工程研究所] 期刊論文

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