English  |  正體中文  |  简体中文  |  Items with full text/Total items : 28611/40649
Visitors : 628816      Online Users : 56
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/23643

Title: Wet etching of Ge2Sb2Te5 films and switching properties of resultant phase change memory cells
Authors: Huai-Yu Cheng;Chao An Jong;Ren-Jei Chung;Tsung-Shune Chin;Rong-Tan Huang
Contributors: NTOU:Institute of Materials Engineering
Date: 2005-09
Issue Date: 2011-10-20T08:06:55Z
Publisher: Semiconductor Science and Technology
Abstract: Abstract:Wet-etching of amorphous Ge2Sb2Te5 films was studied by ICP and XPS spectrometries. It is thought that wet-etching arises from chemical etching that starts with bond breakages, oxidation of each element and subsequent dissolution of the resultant oxides. The Ge element debonds more easily from the Ge–Sb–Te matrix than the Te element, but Ge oxide is more stable than Te oxide. The Te element debonds more sluggishly than Ge, although Te oxide is quite unstable. As a result, Ge is the first leached element that dominates the etching process. Sb is the most difficult element to leach in Ge2Sb2Te5 thin films. Cells of phase-change random access memory (PRAM) were successfully manufactured using the wet-etching process, and studies of the switching properties revealed a low threshold voltage of 0.60 ± 0.15 V.
Relation: 20(11), pp.1111–1115
URI: http://ntour.ntou.edu.tw/handle/987654321/23643
Appears in Collections:[材料工程研究所] 期刊論文

Files in This Item:

File Description SizeFormat

All items in NTOUR are protected by copyright, with all rights reserved.


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback