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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/23615

Title: Sputtered Cu Films Containing Various Insoluble Substances for Advanced Barrierless Metallization
Authors: J. P. Chu;C. H. Li
Contributors: NTOU:Institute of Materials Engineering
Keywords: Barrierless;Copper Films;Focused Ion Beam (FIB);Metallization;Silicon
Date: 2007-03
Issue Date: 2011-10-20T08:06:47Z
Publisher: Materials Science Forum
Abstract: Abstract:Sputtered Cu films containing various insoluble substances, such as Cu(W2.3), Cu(Mo2.0), Cu(Nb0.4), Cu(C2.1) and Cu(W0.4C0.7), are examined in this study. These films are prepared by magnetron sputtering, followed by thermal annealing. The crystal structure, microstructure, SIMS depth-profiles, leakage current, and resistivity of the films are investigated. Good thermal stability of these Cu films is confirmed with focused ion beam, X-ray diffractometry, SIMS, and electrical property measurements. After annealing at 400°C, obvious drops in resistivity, to ~3.8 μ-cm, are seen for Cu(W) film, which is lower than the other films. An evaluation of the leakage current characteristic from the SiO2/Si metal-oxide-semiconductor (MOS) structure also demonstrates that Cu with dilute tungsten is more stable than the other films studied. These results further indicate that the Cu(W) film has more thermal stability than the Cu(Mo), Cu(Nb), Cu(C), Cu(WC) and pure Cu films. Therefore, the film is suitable for the future barrierless metallization.
Relation: 539-543, pp.3497-3502
URI: http://ntour.ntou.edu.tw/handle/987654321/23615
Appears in Collections:[材料工程研究所] 期刊論文

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