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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/23611

Title: Room-temperature fabricated ZnCoO diluted magnetic semiconductors
Authors: Hsin-Hung Huang;Chih-An Yang;Po-Hsiang Huang;Chih-Huang Lai;T. S. Chin;H. E. Huang;H. Y. Bor;R. T. Huang
Contributors: NTOU:Institute of Materials Engineering
Keywords: zinc compounds;cobalt;II-VI semiconductors;wide band gap semiconductors;semimagnetic semiconductors;semiconductor epitaxial layers;magnetic epitaxial layers;ferromagnetic materials;Hall effect;carrier density;magnetisation;magnetoresistance
Date: 2007
Issue Date: 2011-10-20T08:06:46Z
Publisher: Journal of Applied Physics
Abstract: Abstract:(0002) textured and epitaxial ZnCo0.07O films were fabricated at room temperature by ion beam deposition on Si substrates. Hall measurement revealed that ZnCo0.07O films were n-type semiconductors with carrier concentrations higher than 1019/cm3. The carrier concentration of ZnCo0.07O can be manipulated by controlling the oxygen flow rate during deposition or by postannealing. The saturation magnetization and magnetoresistance ratios strongly depended on the carrier concentration. In addition, epitaxial (0002) ZnCo0.07O films, grown on Cu underlayers, showed room-temperature ferromagnetism, which may be potentially used for spintronic devices.
Relation: 101(9), pp.H116
URI: http://ntour.ntou.edu.tw/handle/987654321/23611
Appears in Collections:[材料工程研究所] 期刊論文

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