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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/23610

Title: Room temperature diluted magnetic semiconductors p-(Ga,Ni)N
Authors: Rong-Tan Huang;Chen-Feng Hsu;Ji-Jung Kai;Fu-Rong Chen;Tsung-Shune Chin
Contributors: NTOU:Institute of Materials Engineering
國立臺灣海洋大學:材料工程研究所
Keywords: gallium compounds;nickel;III-V semiconductors;wide band gap semiconductors;semiconductor thin films;semimagnetic semiconductors;ferromagnetic materials;ion implantation;MOCVD;etching;annealing;transmission electron microscopy;semiconductor doping;hole density
Date: 2005
Issue Date: 2011-10-20T08:06:45Z
Publisher: Applied physical letters
Abstract: Abstract:High concentration (5 at. %) Ni was incorporated into a chemical vapor deposition-grown GaN film by using a thin protecting Ni layer on top of the GaN film during ion implantation. After etching off the protecting layer, subsequent annealing up to 800 °C under flowing N2 resulted in a p-type GaN with apparent ferromagnetic behavior up to ∼ 320 K. In addition, the ferromagnetic behavior became more manifest with increasing annealing temperature that increases hole concentration. No presence of any other second phases nor clusters in the Ni-implanted region was identifiable, at least to the 0.2 nm point-to-point resolution of high resolution transmission electron microscopy. This novel indirect implantation process that being easy to implement appears promising for attaining room-temperature diluted magnetic semiconductors which are applicable to magnetotransport, magneto-optical and spintronics devices, among others.
Relation: 87(20), pp.202507
URI: http://ntour.ntou.edu.tw/handle/987654321/23610
Appears in Collections:[材料工程研究所] 期刊論文

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