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|Title: ||Preparation and characterization of sputtered Cu films containing insoluble Nb|
|Authors: ||T. Mahalingam;C. H. Lin;L. T. Wang;J. P. Chu|
|Contributors: ||NTOU:Institute of Materials Engineering|
|Keywords: ||Copper films;Magnetron sputtering;Cu(Nb) thin films|
|Issue Date: ||2011-10-20T08:06:45Z
|Publisher: ||Materials Chemistry and Physics|
|Abstract: ||Abstract:Copper films containing various amounts of insoluble Nb (up to 24.7 at.%) were prepared by r.f. magnetron sputtering. The crystallography and microstructure of the films were investigated for as-deposited and annealed Cu(Nb) thin films. Cu(Nb) thin films are found to consist of non-equilibrium supersaturated solid solution of Nb in Cu with a nanocrystalline microstructure. X-ray diffraction and scanning electron microscope analyses revealed a reduction in the grain sizes of the films with increasing Nb content in the films leading to a grain refinement. The electrical resistivity of as-deposited and annealed Cu(Nb) thin films is found to be low for an Nb content 2.7 at.%. Significant drops in the resistivity were observed for the high Nb contents after annealing at 530 °C which may be due to grain growth and formation of Nb-bearing phase in the film. Microhardness of the films was found to increase with the Nb concentration due to the combined effects of grain refinement and the solute strengthening of Nb.|
|Relation: ||100(2-3), pp.490–495|
|Appears in Collections:||[材料工程研究所] 期刊論文|
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