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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/23593

Title: Spin accumulation and magnetotransport in Co–Al–Co single-electron transistors
Authors: J. H. Shyu;J. W. Chen;Y. D. Yao;J. K. Wu
Contributors: NTOU:Institute of Materials Engineering
Keywords: 72.15.Gd;73.23.Hk;75.75.+a;85.75.−d
Date: 2007-12
Issue Date: 2011-10-20T08:06:42Z
Publisher: physica status solidi (a)
Abstract: abstract:The bias-voltage dependent oscillations of the magnetoresistance in Co-Al-Co single-electron transistors have been investigated. Above the critical voltage comprising of superconducting gap and the charging energy, the conductance-voltage characteristics show an oscillatory behavior with increasing bias-voltage, resulting from the Coulomb staircase. We demonstrate that magnetoresistance could vary periodically from positive to negative values with bias-voltage.
Relation: 204(12), pp.3999–4003
URI: http://ntour.ntou.edu.tw/handle/987654321/23593
Appears in Collections:[材料工程研究所] 期刊論文

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