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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/23559

Title: Magnetoresistance Study of Patterned Permalloy Nanostructure
Authors: D. C. Chen;J. K. Mei;Y. Wang;Y. D. Yao;J. K. Wu;C. X. Huu;N. Chau
Contributors: NTOU:Institute of Materials Engineering
國立臺灣海洋大學:材料工程研究所
Keywords: Magnetoresistance;Domain wall;Permalloy ring
Date: 2008-05
Issue Date: 2011-10-20T08:06:36Z
Publisher: Journal of the Korean Physical Society
Abstract: abstract:We demonstrated the domain wall motion along the direction of the perimeter of a permalloy ring in the onion state. From the magnetoresistance (MR) measurement with a rotating ring at di erent constant elds, the critical eld to form the onion state is near 200 Gauss and the lowest eld that can still drag the domain wall is between 20 and 10 Gauss. The results also revealed a tendency for angle shifting and indicated that the lowest eld component in the perimeter direction (the tangential component) was near 10 Gauss at an applied eld of 20 Gauss.
Relation: 52(5), pp.1419-1422
URI: http://ntour.ntou.edu.tw/handle/987654321/23559
Appears in Collections:[材料工程研究所] 期刊論文

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