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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/23488

Title: Cu films containing insoluble Ru and RuNX on barrierless Si for excellent property improvements
Authors: J. P. Chu;C. H. Lin;V. S. John
Contributors: NTOU:Institute of Materials Engineering
國立臺灣海洋大學:材料工程研究所
Keywords: adhesion;annealing;copper;electrical resistivity;leakage currents;metallisation;ruthenium;ruthenium compounds;silicon;sputter deposition;thermal stability
Date: 2007
Issue Date: 2011-10-20T08:06:24Z
Publisher: Applied Physics Letters
Abstract: Abstract:This letter reports superior properties of Ru- and RuNX-bearing Cu films deposited by cosputtering on barrierless Si substrates. After annealing at temperatures up to 680 °C for 1 h, low resistivity of ∼ 3 μΩ cm and minimal leakage currents as well as no detectable reaction at the Cu/Si interface have confirmed the excellent thermal stability of these Cu(Ru) and Cu(RuNX) films. Furthermore, the highly stable Cu(RuNX) film exhibits an outstanding adhesion property, proving to be a very promising candidate for the barrierless Cu metallization.
Relation: 91(13), pp.132109
URI: http://ntour.ntou.edu.tw/handle/987654321/23488
Appears in Collections:[材料工程研究所] 期刊論文

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