English  |  正體中文  |  简体中文  |  Items with full text/Total items : 26988/38789
Visitors : 2347616      Online Users : 31
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/23488

Title: Cu films containing insoluble Ru and RuNX on barrierless Si for excellent property improvements
Authors: J. P. Chu;C. H. Lin;V. S. John
Contributors: NTOU:Institute of Materials Engineering
Keywords: adhesion;annealing;copper;electrical resistivity;leakage currents;metallisation;ruthenium;ruthenium compounds;silicon;sputter deposition;thermal stability
Date: 2007
Issue Date: 2011-10-20T08:06:24Z
Publisher: Applied Physics Letters
Abstract: Abstract:This letter reports superior properties of Ru- and RuNX-bearing Cu films deposited by cosputtering on barrierless Si substrates. After annealing at temperatures up to 680 °C for 1 h, low resistivity of ∼ 3 μΩ cm and minimal leakage currents as well as no detectable reaction at the Cu/Si interface have confirmed the excellent thermal stability of these Cu(Ru) and Cu(RuNX) films. Furthermore, the highly stable Cu(RuNX) film exhibits an outstanding adhesion property, proving to be a very promising candidate for the barrierless Cu metallization.
Relation: 91(13), pp.132109
URI: http://ntour.ntou.edu.tw/handle/987654321/23488
Appears in Collections:[材料工程研究所] 期刊論文

Files in This Item:

File Description SizeFormat

All items in NTOUR are protected by copyright, with all rights reserved.


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback