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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/23449

Title: Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions
Authors: J. Moser;M. Zenger;C. Gerl;D. Schuh;R. Meier;P. Chen;G. Bayreuther;W. Wegscheider;D. Weiss;C.-H. Lai;R.-T. Huang;M. Kosuth;H. Ebert
Contributors: NTOU:Institute of Materials Engineering
國立臺灣海洋大學:材料工程研究所
Keywords: iron;metal-semiconductor-metal structures;ferromagnetic materials;gallium arsenide;III-V semiconductors;tunnelling magnetoresistance;semiconductor-metal boundaries;magnetic epitaxial layers;semiconductor epitaxial layers;band structure;interface states
Date: 2006
Issue Date: 2011-10-20T08:06:16Z
Publisher: Applied physical letters
Abstract: Abstract:The authors investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnetoresistance (TMR) effect was probed for different types of Fe/GaAs interfaces. For interfaces cleaned by hydrogen plasma the TMR effect is increased and is observable at room temperature. If an epitaxial Fe/GaAs(001) interface is involved, the tunnel junction exhibits a bias dependent inversion of the TMR effect. This is a first experimental signature for band structure effects at an Fe/GaAs interface and is relevant for spin injection experiments.
Relation: 89(16), pp.162106
URI: http://ntour.ntou.edu.tw/handle/987654321/23449
Appears in Collections:[材料工程研究所] 期刊論文

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