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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/18687

Title: 鋯鈦酸鉛(Pb1.1Zr0.52Ti0.48O3)薄膜超音波陣列元件之研究
A Study of Pb1.1Zr0.52Ti0.48O3 Thin Film Ultrasonic Sensor Array
Authors: Yi-Chun Hsieh
謝逸群
Contributors: NTOU:Department of Electrical Engineering
國立臺灣海洋大學:電機工程學系
Keywords: 薄膜超音波發射、接收陣列;LNO;PZT;d33
thin film ultrasonic transmitting and receiving array;LNO;PZT;d33
Date: 2008
Issue Date: 2011-07-04T01:00:00Z
Abstract: 本論文研究主題為:鋯鈦酸鉛(Pb1.1Zr0.52Ti0.48O3)薄膜超音波元件之研究。旨在利用半導體製程技術來開發薄膜超音波陣列元件。本論文之研究方針主要可分成兩個方向:1.薄膜超音波發射陣列之研發,發射陣列的元素數總共有3個,發射距離大約10cm。2.薄膜超音波接收陣列之研發,接收陣列的元素總共16個,接收距離大約15cm。我們所使用的材料包括有矽基板、SiO2、LNO、PZT、Pt。其中LNO與Pt為用來當作發射、接收陣列的上下電極。薄膜的製作方式是採用射頻磁控濺鍍機來沉積薄膜。 LNO沉積速率為700 nm/hr, 30分鐘,沉積薄膜厚度為350 nm,退火溫度為650℃,退火時間10分鐘。PZT 沉積速率為655 nm/hr,沉積時間為90分鐘,沉積厚度為1000 nm,退火溫度為 500℃,退火時間為20 分鐘。Pt沉積速率為100 nm/min,沉積時間2 分鐘,沉積厚度為200 nm。PZT薄膜壓電參數d is 320×10-12m/v,d is -140×10-12m/v,g is 10-12m/v,g is 10-12m/v,K is 0.58,K is 0.45,K is 0.34,ρis 7.9 g/cm3。
Topic of this paper is the study of PZT(Pb1.1Zr0.52Ti0.48O3)thin film ultrasonic array devices, and its aim is the development of thin film ultrasonic array devices by using semiconductor manufacturing technology. The research was carried out in two directions: (1) The research and development of thin film ultrasonic transmitting array. The number of elements of transmitting array is three, and the transmitting distance is about 10cm. (2) The research and development of thin film ultrasonic receiving array. The number of elements of receiving array is sixteen, and the receiving distance is about 15cm. Materials used by us include Si substrate , SiO2, LNO, PZT and Pt, and LNO and Pt serve as the top and bottom electrodes of transmitting/receiving arrays. The fabrication of the thin film is completed by means of RF magnetron sputtering. LNO deposit rate is 700 nm/hr,deposit time 30 min,deposit thickness is 350 nm,annealing temperature is 650℃,annealing time is 10 min. PZT deposit rate is 655 nm/hr,deposit time is 90min,deposit thickness is 1000 nm,annealing temperature is 500℃,annealing time is 20 min. Pt deposit rate is 100 nm/min,deposit time 2 min,deposit thickness is 200 nm. PZT thin film piezoelectric constant d is 320×10-12m/v,d is -140×10-12m/v,g is 10-12m/v,g is 10-12m/v,K is 0.58,K is 0.45,K is 0.34,ρ is 7.9 g/cm3.
URI: http://ethesys.lib.ntou.edu.tw/cdrfb3/record/#G0M95530056
http://ntour.ntou.edu.tw/ir/handle/987654321/18687
Appears in Collections:[電機工程學系] 博碩士論文

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