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Optoelectronic properties and applications of aligned silicon nanowires prepared by electroless etching
|Authors: ||Hsun-Ting Liu|
|Contributors: ||NTOU:Institute of Optoelectronic Sciences|
solar cell;field emission
|Issue Date: ||2011-07-04
In the present thesis, well-aligned silicon nanowires (SiNWs) made through electroless etching were applied to solar cell, field emission and gas sensor. In the solar cell part, we optimized the diffusion process of spin-on-dopant in solar cells to find that SiNWs solar cells with more absorbed light were not showing increasing the efficiencies. Our study shows that surface states of the nanowires did affect seriously on the charge separation and collection of the solar cells. Therefore, surface passivation should play a key role in developing nanowires solar cells. In the field emission part, we took gallium nitride (GaN) as the anode and nanowires as the cathode and observed emission of light from GaN during measurement. The emission was confirmed to be from the plasma of sample under bombardment. In addition, we tried depositing silver on the cathode using silver mirror reaction as well as using n+ SiNWs as the cathode. In both tries, field emission current densities raising from 10-7 A/cm2 to 10-5 A/cm2 were achieved. Finally, as a gas sensor, the spreading resistance of silicon nanowires was measured by use of four wire measurement. The resistance of the SiNWs was observed to rely largely on exposure of air, which could be due to adsorption of oxygen or water molecules on the surface, leading to trapping of surface electrons and reduced conducting current. The result makes possible the application SiNWs to gas sensors; furthermore, the same result provides another proof that, as mentioned, the surface states play an important role in developing SiNWs solar cells.
|Appears in Collections:||[光電科學研究所] 博碩士論文|
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