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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/11039

Title: 過渡性金屬氧化物及硫屬化合物奈米結構的光及電特性分析及雜質對層狀硫屬單晶的物理特性研究(II)
Optical and Electrical Characterization of Transition Metal Oxides and Dichalcogenides Nanostructure and the Effect of Dopants on the Physical Properties of the Layered Dichalcogen(II)
Authors: 程光蛟;林漢年;何清華
Contributors: NTOU:Department of Electrical Engineering
國立臺灣海洋大學:電機工程學系
Keywords: photoconductivity;Van der Waals;effective phonon energy
Date: 2005
Issue Date: 2011-06-28T08:08:14Z
Publisher: 行政院國家科學委員會
Abstract: The absorption-edge anisotropy of 2H-MoSe2 was investigated by photoconductivity (PC) measurements as a function of temperature in the range of 12 to 300 K. A significant shift towards lower energies has been observed in the PC spectra on the edge plane with respect to those corresponding to the van der Waals plane. The parameters that describe the temperature dependence of the absorption edges are evaluated by Varshni’s relation, an expression containing the Bose-Einstein occupation factor for phonons and Manoogian-Woolley semi-empirical model. Effective phonon energy was estimated from the temperature dependence of the Urbach’s energy. The estimated phonon energy exhibits anisotropy parallel and perpendicular to the crystal c-axis and can be correlated to the observed Raman active E1g and A1g modes.
Relation: NSC94-2112-M019-001
URI: http://ntour.ntou.edu.tw/ir/handle/987654321/11039
Appears in Collections:[電機工程學系] 研究計畫

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