In this work, we report on the growth and characterization of Re-doped MoSe2 single crystals prepared by chemical vapor transport method with Br2 as the transporting agent. XRD has been used to confirm the 2H structure of the as-grown doped samples. The electrical conductivity and Hall effect measurement were studied between 15K and 300K. The results show increases in conductivities and concentration with the addition of dopants with slight lowering in the activation energy in comparing with the undoped one. The thicker doped sample has been used to investigate the exciton transiton in the van der Waals and edge plane by electrolyte electroreflectance (EER) at room temperature. Detailed experimental procedure and the effect of the two dopants will be compared and discussed.