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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/11035

Title: 雜質對層狀過渡性金屬硫屬化合物單晶之導電性及光電特性影響研究(II)
The Effect of Dopants on the Electrical and Optical Properties of Transition Metal Dichalcogenides Single Crystals with Layered Structure (II)
Authors: 程光蛟;何清華;吳允中
Contributors: NTOU:Department of Electrical Engineering
Keywords: 導電度;光學性質;電解液電場調制;激子躍遷
Conductivity;Optical property;Electrolyte electroreflectance;Exciton transition
Date: 2003
Issue Date: 2011-06-28T08:08:14Z
Publisher: 行政院國家科學委員會
Abstract: In this work, we report on the growth and characterization of Re-doped MoSe2 single crystals prepared by chemical vapor transport method with Br2 as the transporting agent. XRD has been used to confirm the 2H structure of the as-grown doped samples. The electrical conductivity and Hall effect measurement were studied between 15K and 300K. The results show increases in conductivities and concentration with the addition of dopants with slight lowering in the activation energy in comparing with the undoped one. The thicker doped sample has been used to investigate the exciton transiton in the van der Waals and edge plane by electrolyte electroreflectance (EER) at room temperature. Detailed experimental procedure and the effect of the two dopants will be compared and discussed.
Relation: NSC92-2112-M019-008
URI: http://ntour.ntou.edu.tw/ir/handle/987654321/11035
Appears in Collections:[電機工程學系] 研究計畫

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