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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/11031

Title: 過渡金屬硫屬化合物薄膜與單晶之成長與特性研究
Electrical and Optical Properties of Transition Metal Dichalcogenide Thin Films and Single Crystals
Authors: 程光蛟;何清華
Contributors: NTOU:Department of Electrical Engineering
國立臺灣海洋大學:電機工程學系
Keywords: 過渡金屬;薄膜;單晶
Transition metal;Thin film;Single crystal
Date: 2000
Issue Date: 2011-06-28T08:08:13Z
Publisher: 行政院國家科學委員會
Abstract: Single crystals of rhenium-doped MoS2 have been grown by chemical vapor transport method using bromine as a transporting agent. Single crystalline platelets up to 10 x 10 mm2 surface area and 2 mm in thickness were obtained. By analyzing the X-ray diffraction profile, the structure of the single crystals shows rhombohedral symmetry. Temperaturedependent electrical resistivity and Hall coefficient were measured between 20 and 300 K using the van der Pauw technique. The hall coefficient measurement indicates that all the samples are n-type in nature. The optical absorption measurements reveal that rheniumdoped MoS2 is an indirect semiconductor. The energy gap shows a red shift by increasing the doping concentrations.
Relation: NSC89-2112-M019-002
URI: http://ntour.ntou.edu.tw/ir/handle/987654321/11031
Appears in Collections:[電機工程學系] 研究計畫

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